Towards Room - Temperature deterministic ferroelectric control of ferromagnetic thin films

نویسنده

  • Zhen HUANG
چکیده

The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and material-systems possessing both ferroelectric and ferromagnetic orders. Multiferroics with two order parameters coupled through a magnetoelectric interaction are of particular interest for novel information processing technologies. This thesis explores a promising concept of magnetoelectric multiferroic heterostructure incorporating separate ferroelectric and ferromagnetic thin layers with field-effect-mediated coupling through the heterointerface. The major issues related to ferroelectric control of ferromagnetism in multiferroic heterostructures addressed in this thesis include non-volatile magnetoelectric coupling at room temperature, deterministic switching of magnetization via polarization reversal, ferroelectric control of dynamics of magnetic domains and integration of ferroelectric gates on magnetic channels. The major accomplishments of this thesis are the following: Non-volatile ferroelectric control of magnetic properties has been demonstrated in ultra-thin Co layers at room temperature. The ferromagnetic transition Curie temperature, magnetic anisotropy energy and magnetic coercivity are shown to be switchable via the persistent field effect associated with the ferroelectric polarization. The magnitude of the effect is comparable or exceeds the results observed using the conventional (non-ferroelectric) gates. Local control of individual magnetic domain nucleation and propagation in Co channels by creating new ferroelectric domains has been achieved at the ambient conditions. The microscopic ferroelectric domains written on poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate projected onto the magnetic channel changing locally the magnetic anisotropy energy, and consequently altering magnetic domain dynamics. Therefore it was possible to promote/impede magnetic domain nucleation and significantly change the domain wall velocity using a non-destructive and reversible procedure of ferroelectric domain writing. Non-volatile control of anisotropic magnetoresistance (AMR) has been demonstrated on diluted magnetic semiconductor (Ga,Mn)(As,P) thin films with integrated P(VDF-TrFE) ferroelectric gate. The field effect induced by the ferroelectric gate has shown the capability to strongly modulate the

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

Sr(Ti1-xFex)O3-δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO₃ buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1-xFex)O3-δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the fe...

متن کامل

Multiferroic iron oxide thin films at room temperature.

Multiferroic behaviour at room temperature is demonstrated in ε-Fe2 O3 . The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2 O3 in novel devices.

متن کامل

Electric field control of magnetization reorientation in Co/Pb (Mg1/3Nb2/3)-PbTiO3 heterostructure

Herein, we demonstrated an apparent electric field control of magnetization reorientation at room temperature, through a strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructure. As the applied electric field increased, the magnetization tended to deviate from the original direction, which was induced by nonlinear strain vs electric-field beha...

متن کامل

Room temperature magnetic-field manipulation of electrical polarization in multiferroic thin film composite BiFeO3/La2/3Ca1/3MnO3

The electrical polarization in an epitaxially BiFeO3 film grown on La2/3Ca1/3MnO3/SrTiO3 is observed to be enhanced greatly by a magnetic field at room temperature. The simultaneous ferromagnetic order and ferroelectric polarization shown by the BiFeO3 film causes the strong coupling of the magnetic and ferroelectric domains in the BiFeO3 films. It was proposed that the activation energy for th...

متن کامل

Multiferroic properties of Pb„Zr,Ti...O3/CoFe2O4 composite thin films

In the present work we report multiferroic behavior in lead zirconate titanate PZT –cobalt iron oxide CFO composite thin films. It is found that upon annealing, the multilayered structures are intermixed at least partially, and CFO is phase separated into PZT matrix to form a composite film. The phase separation behavior has been characterized by x-ray photoelectron spectroscopy depth profiling...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015